Hard carbon nitride and method for preparing same
Patent
·
OSTI ID:7072508
Novel crystalline [alpha](silicon nitride-like)-carbon nitride and [beta](silicon nitride-like)-carbon nitride are formed by sputtering carbon in the presence of a nitrogen atmosphere onto a single crystal germanium or silicon, respectively, substrate. 1 figure.
- DOE Contract Number:
- AC03-76SF00098
- Assignee:
- Univ. of California, Berkeley, CA (United States)
- Patent Number(s):
- US 5110679; A
- Application Number:
- PPN: US 7-513245
- OSTI ID:
- 7072508
- Country of Publication:
- United States
- Language:
- English
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