Reaction of Ta thin film with single crystalline (001) [beta]-SiC

Journal Article · Mon Aug 15 00:00:00 EDT 1994 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.357629· OSTI ID:7070654

Chen, J S; Kolawa, E; Nicolet, M ^[1]; Ruiz, R P ^[2]; Baud, L; Jaussaud, C ^[3]; Madar, R ^[4]

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1. California Institute of Technology, Pasadena, California 91125 (United States)
2. Jet Propulsion Laboratory, Pasadena, California 91109 (United States)
3. LETI (CEA-Technologies avancees), DMEL-CENG, 85X, F-38041 Grenoble (France)
4. L. M. G. P.-ENSPG, BP 46, F-38402 Saint-Martin-d'Heres (France)

The reaction between a sputter-deposited Ta film (320 nm thick) and a single crystalline (001) [beta]-SiC substrate induced by vacuum annealing at temperatures of 600--1200 [degree]C for 1 h (30 min at 1100 [degree]C) is investigated by 3 MeV He[sup ++] backscattering spectrometry, x-ray diffraction, secondary ion mass spectrometry, and transmission and scanning electron microscopies. No significant reaction is observed at 800 [degree]C or at lower temperatures. At 900 [degree]C, the main product phases are Ta[sub 2]C and carbon-stabilized Ta[sub 5]Si[sub 3]. A minor amount of unreacted Ta is also present. After annealing at 1000 [degree]C, all the tantalum has reacted; the reaction zone possesses a multilayered structure of [beta]-SiC/TaC/carbon-stabilized Ta[sub 5]Si[sub 3]/[alpha]-Ta[sub 5]Si[sub 3]/Ta[sub 2]C. The diffusion path at 1000 [degree]C is plotted on the isothermal section of the Ta-Si-C phase diagram. At 1100 [degree]C, the reacted layer has an interface with the SiC substrate that is still quite flat but has a rough surface due to the formation of macroscopic voids within the reacted layer. The equilibrium products predicted by the phase diagram are TaC and TaSi[sub 2]. This final state is reached by annealing at 1200 [degree]C for 1 h. At that point, the reacted layer has a laterally very uneven structure and morphology.

• OSTI ID: 7070654
• Journal Information: Journal of Applied Physics; (United States), Vol. 76:4; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON CARBIDES
CHEMICAL REACTIONS
TANTALUM
ALLOYS
ANNEALING
BACKSCATTERING
CHEMICAL COMPOSITION
DIFFUSION
INTERFACES
MASS SPECTRA
PHASE STUDIES
THIN FILMS
X-RAY DIFFRACTION
CARBIDES
CARBON COMPOUNDS
COHERENT SCATTERING
DIFFRACTION
ELEMENTS
FILMS
HEAT TREATMENTS
METALS
SCATTERING
SILICON COMPOUNDS
SPECTRA
TRANSITION ELEMENTS
360606* - Other Materials- Physical Properties- (1992-)