A high resolution electron energy loss spectroscopy study of trimethylgallium decomposition on gallium rich GaAs(100)

Journal Article · Sun Mar 01 04:00:00 EST 1992 · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States)

DOI:https://doi.org/10.1116/1.578083· OSTI ID:7069982

Zhu, X; White, J M ^[1]; Creighton, J R ^[2]

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1. Department of Chemistry, University of Texas at Austin, Austin, Texas 78712 (United States)
2. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

The adsorption and decomposition of trimethylgallium (TMGa) on the gallium rich (4{times}6) and (1{times}6) GaAs(100) surfaces have been studied by high resolution electron energy loss spectroscopy (HREELS), in conjunction with temperature-programmed desorption, x-ray photoelectron spectroscopy, and low energy electron diffraction. TMGa adsorbs molecularly at 108 K and dissociates above 200 K to form monomethylgallium (MMGa) and, possibly, some dimethylgallium surface species. Above 400 K, MMGa dominates. Surface MMGa remains stable until 650 K, above which temperature methyl radicals desorb. HREELS results showed unambiguously that methyl groups remain intact throughout the thermal decomposition of TMGa on GaAs(100). The effect of UV photons on both surface TMGa and MMGa has also been investigated, but no photochemistry was observed at wavelengths longer than 230 nm.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 7069982
• Journal Information: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States), Journal Name: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States) Vol. 10:2; ISSN JVTAD; ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400201* -- Chemical & Physicochemical Properties
ADSORPTION
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL REACTIONS
DECOMPOSITION
ELECTROMAGNETIC RADIATION
ELECTRON SPECTROSCOPY
ENERGY-LOSS SPECTROSCOPY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IONIZING RADIATIONS
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PHOTOELECTRON SPECTROSCOPY
PNICTIDES
RADIATIONS
SORPTION
SORPTIVE PROPERTIES
SPECTROSCOPY
SURFACE PROPERTIES
TEMPERATURE EFFECTS
TEMPERATURE RANGE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
X RADIATION