Decomposition of trimethylgallium on the gallium-rich GaAs (100) surface: Implications for atomic layer epitaxy

Journal Article · Mon Jul 16 04:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103714· OSTI ID:7069001

Creighton, J R; Lykke, K R; Shamamian, V A; Kay, B D ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (USA)

The decomposition of trimethylgallium (TMGa) on the gallium-rich (4{times}6) and (1{times}6) GaAs (100) surface was studied with temperature programmed desorption, Auger electron spectroscopy, and low-energy electron diffraction. TMGa was found to dissociatively chemisorb on the gallium-rich surfaces, apparently at the gallium vacancies that exist on these surfaces. We have unambiguously identified methyl radicals desorbing from the surface with the maximum rate at {similar to}440 {degree}C following a saturation TMGa exposure. Since TMGa was shown to decompose on the clean, gallium-rich GaAs (100) surfaces, the self-limiting deposition of gallium during atomic layer epitaxy must be due to the presence of surface methyl groups which inhibit further TMGa dissociative chemisorption.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 7069001
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:3; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603 -- Materials-- Properties
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400201* -- Chemical & Physicochemical Properties
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
CHEMISORPTION
DECOMPOSITION
DEPOSITION
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
NATIONAL ORGANIZATIONS
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PNICTIDES
SANDIA LABORATORIES
SEPARATION PROCESSES
SORPTION
SORPTIVE PROPERTIES
SURFACE COATING
SURFACE PROPERTIES
US AEC
US DOE
US ERDA
US ORGANIZATIONS
VAPOR PHASE EPITAXY