Dopant distribution in nominally yttrium-doped sapphire

Journal Article · Fri Aug 01 04:00:00 EDT 1986 · J. Am. Ceram. Soc.; (United States)

DOI:https://doi.org/10.1111/j.1151-2916.1986.tb04838.x· OSTI ID:7067089

Cawley, J D; Halbran, J W

The dopant distribution in nominally yttrium-doped sapphire is characterized. The results indicate that virtually all of the intended dopant segregated to the surface of the crystal during growth. This implies that the solubility of yttrium in alumina is <10 ppm even at temperatures approaching the melting point of alumina.

• Research Organization: Dept. of Metallurgy and Materials Science, Case Western Reserve Univ., Cleveland, OH 44106
• OSTI ID: 7067089
• Journal Information: J. Am. Ceram. Soc.; (United States), Journal Name: J. Am. Ceram. Soc.; (United States) Vol. 69:8; ISSN JACTA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure &amp; Phase Studies
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CHALCOGENIDES
CORUNDUM
CRYSTAL DOPING
CRYSTAL GROWTH
DOPED MATERIALS
ELEMENTS
MATERIALS
MELTING POINTS
METALS
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
SAPPHIRE
SEGREGATION
SOLUBILITY
TEMPERATURE EFFECTS
THERMODYNAMIC PROPERTIES
TRANSITION ELEMENTS
TRANSITION TEMPERATURE
YTTRIUM