Accelerated aging test of InGaAsP/InP double-heterostructure laser diodes with single transverse mode

Journal Article · Thu Jan 01 04:00:00 EST 1981 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92120· OSTI ID:7066977

Imai, H; Morimoto, M; Ishikawa, H; Hori, K; Takusagawa, M; Wakita, K; Fukuda, M; Iwane, G

Aging tests of InGaAsP/InP double-heterostructure (DH) laser diodes with single transverse mode have been performed at 50 and 70 /sup 0/C under constant optical power operation. The devices were self-aligned-structure DH laser diodes bonded with AuSn-alloy solder. Samples for 3-mW/facet operation at 50 /sup 0/C are operating at over 5000 H, those for 5-mW/facet operation at 50 /sup 0/C are operating at over 4500 H, and those for 3-mW/facet operation at 70 /sup 0/C are operating at over 3500 H. Far-field patterns parallel to the junction plane in these samples do not change in this aging. Averaged increasing rates of the driving current to maintain the specified optical power are 1.8 x 10/sup -6//H for 3-mW operation at 50 /sup 0/C, 48 x 10/sup -6//H for 5-mW operation at 50 /sup 0/C, and 1.3 x 10/sup -5//H for 3-mW operation at 70 /sup 0/C.

• Research Organization: Fujitsu Laboratories Ltd., 1015 Kamikodanaka Nakahara-ku, Kawasaki 211, Japan
• OSTI ID: 7066977
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 38:1; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AGING
ALIGNMENT
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
DATA
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GOLD ALLOYS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
JOINTS
LASERS
LIFETIME
MEDIUM TEMPERATURE
NUMERICAL DATA
OSCILLATION MODES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SOLDERED JOINTS
TIN ALLOYS