Bias-lead monitoring of ultrafast nonlinearities in InGaAsP diode laser amplifiers

Journal Article · Mon Jul 09 04:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103963· OSTI ID:7066690

Hall, K L; Ippen, E P ^[1]; Eisenstein, G ^[2]

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1. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA (USA) Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA (USA)
2. Department of Electrical Engineering, Technion, Haifa 32000 (Israel)

In this letter we report the first femtosecond measurements of gain and loss dynamics in InGaAsP diode laser amplifiers using optically induced changes in diode junction voltage. Our results confirm that previously observed optical pump-probe signals are related to carrier dynamics in the active region of the amplifiers.

• OSTI ID: 7066690
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:2; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CHARGE CARRIERS
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
NONLINEAR OPTICS
OPTICAL PUMPING
OPTICS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
PUMPING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS