Effect of growth conditions of an Al/sub x/Ga/sub 1-x/As--GaAs heterostructure in an organometallic--AsH/sub 3/--H/sub 2/ system on the parameters of solar cells

Journal Article · Sun Jan 01 00:00:00 EST 1984 · Sov. Phys. - Tech. Phys. (Engl. Transl.); (United States)

OSTI ID:7065155

Kagan, M B; Lyubashevskaya, T L; Mil'vidskii, M G; Nalivaiko, I I; Timashkov, V M; Fatyushina, N P

In our work we studied how growth temperature and As/Ga atomic ratio in the gas phase affect the electrophysical properties of epitaxial GaAs films in the active region of a solar cell (and hence the photoelectric parameters of the cell). (AIP)

• Research Organization: State Scientific-Research and Planning Institute of the Rare Metal Industry, Moscow
• OSTI ID: 7065155
• Journal Information: Sov. Phys. - Tech. Phys. (Engl. Transl.); (United States), Vol. 29:1
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
GALLIUM ARSENIDES
TEMPERATURE EFFECTS
VAPOR PHASE EPITAXY
HETEROJUNCTIONS
FABRICATION
SOLAR CELLS
EFFICIENCY
ALUMINIUM ARSENIDES
ARSENIC HYDRIDES
CARRIER DENSITY
CHEMICAL COMPOSITION
GROWTH
HYDROGEN
IMPURITIES
LAYERS
MOBILITY
OPTIMIZATION
ORGANOMETALLIC COMPOUNDS
PERFORMANCE
PHOTOELECTRIC EFFECT
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DIRECT ENERGY CONVERTERS
ELEMENTS
EPITAXY
EQUIPMENT
GALLIUM COMPOUNDS
HYDRIDES
HYDROGEN COMPOUNDS
JUNCTIONS
NONMETALS
ORGANIC COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOELECTROMAGNETIC EFFECTS
PHOTOVOLTAIC CELLS
PNICTIDES
SEMICONDUCTOR JUNCTIONS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion