Deposition of thin films by ion beam sputtering: Mechanisms and epitaxial growth

Conference · Thu Sep 15 00:00:00 EDT 1988 · AIP Conf. Proc.; (United States)

OSTI ID:7063352

Schwebel, C; Gautherin, G

In this paper, the capabilities of ion beam sputtering (IBS) to prepare epitaxial layers of various materials are investigated. Thin films (W<0.5 ..mu..m) of silicon, yttria stabilized zirconia (YSZ), tungsten and nickel were deposited using an UHV apparatus equipped with surface analytical tools (RHEED, Auger electron spectrometer). Rare gas ions (Ar, Kr, Xe) of 20 keV energy were used. Silicon homoepitaxial films deposited at temperature above 700/sup 0/C showed structure and electrical properties close to the bulk. Layers of YSZ on Si substrates were deposited by sputtering of a (Y/sub 2/ O/sub 3/)/sub 0.23/ (ZrO/sub 2/)/sub 0.77/ target. Films of good epitaxial quality were grown on Si(100) substrates under partial pressure of oxygen at temperatures in the range 700/sup 0/C--800/sup 0/C. Tungsten silicide and Ni/sub x/GaAs films were prepared by pure metal deposition on heated silicon and GaAs substrates, respectively. Structure and electrical properties of these films have been determined as a function of the deposition temperature. In order to improve the thin film properties, sputtering-related phenomena were studied.

• Research Organization: Institut d'Electronique Fondamentale, Unite Associee au CNRS (AU 22) Universite Paris XI, Bat. 220: 91405 ORSAY-CEDEX (F)
• OSTI ID: 7063352
• Report Number(s): CONF-8711124-
• Journal Information: AIP Conf. Proc.; (United States), Vol. 167:1; Conference: Topical conference on deposition and growth: limits for microelectronics, Anaheim, CA, USA, 2 Nov 1987
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
GALLIUM ARSENIDES
SORPTIVE PROPERTIES
INTEGRATED CIRCUITS
FABRICATION
NICKEL
SPUTTERING
SILICON
TUNGSTEN
TUNGSTEN SILICIDES
ZIRCONIUM OXIDES
HIGH TEMPERATURE
ION BEAMS
SURFACE COATING
ULTRAHIGH VACUUM
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHALCOGENIDES
DEPOSITION
ELECTRONIC CIRCUITS
ELEMENTS
GALLIUM COMPOUNDS
METALS
MICROELECTRONIC CIRCUITS
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
REFRACTORY METAL COMPOUNDS
SEMIMETALS
SILICIDES
SILICON COMPOUNDS
SURFACE PROPERTIES
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNGSTEN COMPOUNDS
ZIRCONIUM COMPOUNDS
656003* - Condensed Matter Physics- Interactions between Beams &amp; Condensed Matter- (1987-)
360601 - Other Materials- Preparation &amp; Manufacture
360101 - Metals &amp; Alloys- Preparation &amp; Fabrication