Method for forming low-resistance ohmic contacts on semiconducting oxides

Patent · Mon Oct 01 04:00:00 EDT 1979

OSTI ID:7062189

Narayan, J

The invention provides a new method for the formation of high-quality ohmic contacts on wide-band-gap semiconducting oxides. As exemplified by the formation of an ohmic contact on n-type BaTiO/sub 3/ containing a p-n junction, the invention entails depositing a film of a metallic electroding material on the BaTiO/sub 3/ surface and irradiating the film with a Q-switched laser pulse effecting complete melting of the film and localized melting of the surface layer of oxide immediately underlying the film. The resulting solidified metallic contact is ohmic, has unusually low contact resistance, and is thermally stable, even at elevated temmperatures. The contact does not require cleaning before attachment of any suitable electrical lead. This method is safe, rapid, reproducible, and relatively inexpensive.

• DOE Contract Number: W-7405-ENG-26
• Assignee: Dept. of Energy
• Patent Number(s): None
• OSTI ID: 7062189
• Country of Publication: United States
• Language: English

Related Subjects

420201* -- Engineering-- Cryogenic Equipment & Devices
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALKALINE EARTH METAL COMPOUNDS
BARIUM COMPOUNDS
CHALCOGENIDES
COST
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
EQUIPMENT
FABRICATION
FILMS
IRRADIATION
JUNCTIONS
LASERS
MATERIALS
OXIDES
OXYGEN COMPOUNDS
P-N JUNCTIONS
PHYSICAL PROPERTIES
Q-SWITCHING
SAFETY
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SUPERCONDUCTING DEVICES
SURFACE COATING
TITANIUM COMPOUNDS
TITANIUM OXIDES
TRANSITION ELEMENT COMPOUNDS