Method for forming low-resistance ohmic contacts on semiconducting oxides

Patent · Mon Oct 01 00:00:00 EDT 1979

OSTI ID:7062189

Narayan, J

The invention provides a new method for the formation of high-quality ohmic contacts on wide-band-gap semiconducting oxides. As exemplified by the formation of an ohmic contact on n-type BaTiO/sub 3/ containing a p-n junction, the invention entails depositing a film of a metallic electroding material on the BaTiO/sub 3/ surface and irradiating the film with a Q-switched laser pulse effecting complete melting of the film and localized melting of the surface layer of oxide immediately underlying the film. The resulting solidified metallic contact is ohmic, has unusually low contact resistance, and is thermally stable, even at elevated temmperatures. The contact does not require cleaning before attachment of any suitable electrical lead. This method is safe, rapid, reproducible, and relatively inexpensive.

• DOE Contract Number: W-7405-ENG-26
• Assignee: Dept. of Energy
• OSTI ID: 7062189
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ELECTRIC CONTACTS
FABRICATION
SEMICONDUCTOR MATERIALS
ELECTRIC CONDUCTIVITY
SUPERCONDUCTING DEVICES
BARIUM COMPOUNDS
COST
FILMS
IRRADIATION
LASERS
OXIDES
P-N JUNCTIONS
Q-SWITCHING
SAFETY
SURFACE COATING
TITANIUM OXIDES
ALKALINE EARTH METAL COMPOUNDS
CHALCOGENIDES
DEPOSITION
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
EQUIPMENT
JUNCTIONS
MATERIALS
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
SEMICONDUCTOR JUNCTIONS
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
420201* - Engineering- Cryogenic Equipment & Devices