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Title: Laser method for forming low-resistance ohmic contacts on semiconducting oxides

Abstract

This invention is a new method for the formation of high-quality ohmic contacts on wide-band-gap semiconducting oxides. As exemplified by the formation of an ohmic contact on n-type BaTiO.sub.3 containing a p-n junction, the invention entails depositing a film of a metallic electroding material on the BaTiO.sub.3 surface and irradiating the film with a Q-switched laser pulse effecting complete melting of the film and localized melting of the surface layer of oxide immediately underlying the film. The resulting solidified metallic contact is ohmic, has unusually low contact resistance, and is thermally stable, even at elevated temperatures. The contact does not require cleaning before attachment of any suitable electrical lead. This method is safe, rapid, reproducible, and relatively inexpensive.

Inventors:
 [1]
  1. (Knoxville, TN)
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN
OSTI Identifier:
863856
Patent Number(s):
US 4261764
Assignee:
United States of America as represented by United States (Washington, DC) ORNL
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
laser; method; forming; low-resistance; ohmic; contacts; semiconducting; oxides; formation; high-quality; wide-band-gap; exemplified; contact; n-type; batio; containing; p-n; junction; entails; depositing; film; metallic; electroding; material; surface; irradiating; q-switched; pulse; effecting; complete; melting; localized; layer; oxide; immediately; underlying; resulting; solidified; unusually; resistance; thermally; stable; elevated; temperatures; require; cleaning; attachment; suitable; electrical; lead; safe; rapid; reproducible; relatively; inexpensive; conducting oxide; p-n junction; elevated temperatures; laser pulse; elevated temperature; surface layer; ohmic contact; thermally stable; contact resistance; ohmic contacts; relatively inexpensive; resulting solid; solidified metal; electrical lead; semiconducting oxides; metallic contact; laser method; /438/148/219/257/

Citation Formats

Narayan, Jagdish. Laser method for forming low-resistance ohmic contacts on semiconducting oxides. United States: N. p., 1981. Web.
Narayan, Jagdish. Laser method for forming low-resistance ohmic contacts on semiconducting oxides. United States.
Narayan, Jagdish. Thu . "Laser method for forming low-resistance ohmic contacts on semiconducting oxides". United States. https://www.osti.gov/servlets/purl/863856.
@article{osti_863856,
title = {Laser method for forming low-resistance ohmic contacts on semiconducting oxides},
author = {Narayan, Jagdish},
abstractNote = {This invention is a new method for the formation of high-quality ohmic contacts on wide-band-gap semiconducting oxides. As exemplified by the formation of an ohmic contact on n-type BaTiO.sub.3 containing a p-n junction, the invention entails depositing a film of a metallic electroding material on the BaTiO.sub.3 surface and irradiating the film with a Q-switched laser pulse effecting complete melting of the film and localized melting of the surface layer of oxide immediately underlying the film. The resulting solidified metallic contact is ohmic, has unusually low contact resistance, and is thermally stable, even at elevated temperatures. The contact does not require cleaning before attachment of any suitable electrical lead. This method is safe, rapid, reproducible, and relatively inexpensive.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1981},
month = {1}
}

Patent:

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