In-Plane Magnetic Field Effect on the Transport Properties in a Quasi-3D Quantum Well Structure
- Sandia National Laboratories
The transport properties of a quasi-three-dimensional, 200 layer quantum well structure are investigated at integer filling in the quantum Hall state. We find that the transverse magnetoresistance Rxx, the Hall resistance Rxy, and the vertical resistance Rzz all follow a similar behavior with both temperature and in-plane magnetic field. A general feature of the influence of increasing in-plane field Bin is that the Hall conductance quantization first improves, but above a characteristic value BCin, the quantization is systematically removed. We consider the interplay of the chid edge state transport and the bulk (quantum Hall) transport properties. This mechanism may arise from the competition of the cyclotron energy with the superlattice band structure energies. A comparison of the resuIts with existing theories of the chiral edge state transport with in-plane field is also discussed.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 7062
- Report Number(s):
- SAND99-1315J; ON: DE00007062
- Journal Information:
- Physical Review Letters, Journal Name: Physical Review Letters
- Country of Publication:
- United States
- Language:
- English
Similar Records
Quantization of the diagonal resistance : density gradients and the empirical resistance rule in a 2D system.
Resistance scaling for composite fermions in the presence of a density gradient.