In-plane magnetic-field effect on transport properties of the chiral edge state in a quasi-three-dimensional quantum well structure
- Department of Physics, Boston College, Chestnut Hill, Massachusetts 02167 (United States)
- National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310 (United States)
- Sandia National Laboratory, Albuquerque, New Mexico 87185 (United States)
- National Pulsed Magnet Laboratory and Semi-Conductor Nanofabrication Facility School of Physics, University of New South Wales, Sydney 2052 (Australia)
The transport properties of a quasi-three-dimensional, 200-layer quantum-well structure are investigated at integer filling in the quantum Hall state, concomitant with the chiral edge state condition. We find that the transverse magnetoresistance R{sub xx}, the Hall resistance R{sub xy}, and the vertical resistance R{sub zz} all follow a similar behavior with {ital both} temperature and in-plane magnetic field. A general characteristic of the influence of increasing in-plane field B{sub in} is that the quantization condition first improves, but above a critical value B{sub in}{sup C}, the quantization is systematically removed. We consider the interplay of the chiral edge state transport and the bulk (quantum Hall) transport properties. This mechanism may arise from the competition of the cyclotron energy with the superlattice band-structure energies. A comparison of the results with existing theories of the chiral edge state transport with in-plane field is also discussed. {copyright} {ital 1999} {ital The American Physical Society}
- OSTI ID:
- 686555
- Journal Information:
- Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 12 Vol. 60; ISSN PRBMDO; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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