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U.S. Department of Energy
Office of Scientific and Technical Information

Phased array semiconductor lasers with preferred emission in a single lobe

Patent ·
OSTI ID:7059484
This patent describes a phased array semiconductor laser comprising spatially disposed multiple lasing elements formed relative to an active region providing optical cavities for light wave generation and propagation under lasing conditions. The optical field of the lasing elements are coupled into the optical cavities of adjacent lasing elements to provide a phased locked condition across the array. A structural means is associated with the laser to cause regions between the optical cavities to produce higher gain in the between regions compared to the gain experienced in the optical cavities by spatially modulating the optical overlap of the optical field of each of the lasing elements laterally across the array so as to favor the fundamental supermode over the other potential supermodes of the laser.
Assignee:
Xerox Corp., Stamford, CT
Patent Number(s):
US 4624000
OSTI ID:
7059484
Country of Publication:
United States
Language:
English