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Title: Nucleation and growth of diamond on carbon-implanted single crystal copper surfaces

Abstract

The nucleation and growth of diamond crystals on single crystal copper surfaces has been studied. Microwave plasma enhanced chemical vapor deposition (MPECVD) was used for diamond nucleation and growth. Prior to diamond nucleation, the single crystal copper surface is modified by carbon ion implantation at an elevated temperature ({similar to}820 {degree}C). This procedure leads to the formation of a graphite film on the copper surface, resulting in an enhancement of diamond crystallite nucleation. A simple lattice model has been constructed to describe the mechanism of diamond nucleation on graphite as {l angle}111{r angle}{sub diamond} parallel to {l angle}0001{r angle}{sub graphite} and {l angle}110{r angle}{sub diamond} parallel to {l angle}1120{r angle}{sub graphite}. This leads to a good understanding of diamond growth on carbon-implanted copper surfaces.

Authors:
; ;  [1];  [2]
  1. (Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States))
  2. (Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States))
Publication Date:
OSTI Identifier:
7049274
DOE Contract Number:
FG02-87ER45314; AC05-84OR21400
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Materials Research; (United States); Journal Volume: 7:9
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DIAMONDS; CHEMICAL VAPOR DEPOSITION; NUCLEATION; CARBON IONS; COPPER; ION IMPLANTATION; MONOCRYSTALS; STRUCTURAL MODELS; SURFACES; CARBON; CHARGED PARTICLES; CHEMICAL COATING; CRYSTALS; DEPOSITION; ELEMENTAL MINERALS; ELEMENTS; IONS; METALS; MINERALS; NONMETALS; SURFACE COATING; TRANSITION ELEMENTS; 360601* - Other Materials- Preparation & Manufacture

Citation Formats

Ong, T.P., Xiong, F., Chang, R.P.H., and White, C.W.. Nucleation and growth of diamond on carbon-implanted single crystal copper surfaces. United States: N. p., 1992. Web. doi:10.1557/JMR.1992.2429.
Ong, T.P., Xiong, F., Chang, R.P.H., & White, C.W.. Nucleation and growth of diamond on carbon-implanted single crystal copper surfaces. United States. doi:10.1557/JMR.1992.2429.
Ong, T.P., Xiong, F., Chang, R.P.H., and White, C.W.. 1992. "Nucleation and growth of diamond on carbon-implanted single crystal copper surfaces". United States. doi:10.1557/JMR.1992.2429.
@article{osti_7049274,
title = {Nucleation and growth of diamond on carbon-implanted single crystal copper surfaces},
author = {Ong, T.P. and Xiong, F. and Chang, R.P.H. and White, C.W.},
abstractNote = {The nucleation and growth of diamond crystals on single crystal copper surfaces has been studied. Microwave plasma enhanced chemical vapor deposition (MPECVD) was used for diamond nucleation and growth. Prior to diamond nucleation, the single crystal copper surface is modified by carbon ion implantation at an elevated temperature ({similar to}820 {degree}C). This procedure leads to the formation of a graphite film on the copper surface, resulting in an enhancement of diamond crystallite nucleation. A simple lattice model has been constructed to describe the mechanism of diamond nucleation on graphite as {l angle}111{r angle}{sub diamond} parallel to {l angle}0001{r angle}{sub graphite} and {l angle}110{r angle}{sub diamond} parallel to {l angle}1120{r angle}{sub graphite}. This leads to a good understanding of diamond growth on carbon-implanted copper surfaces.},
doi = {10.1557/JMR.1992.2429},
journal = {Journal of Materials Research; (United States)},
number = ,
volume = 7:9,
place = {United States},
year = 1992,
month = 9
}
  • The nucleation and growth of diamond crystals on single-crystal copper surfaces implanted with carbon ions has been studied. Microwave plasma-enhanced chemical vapor deposition was used for diamond growth. The single-crystal copper substrates were implanted either at room temperature or at elevated temperature ({similar to}820 {degree}C) with carbon ions prior to diamond nucleation. This procedure leads to the formation of a graphite film on the copper surface which greatly enhances diamond crystallite nucleation. From our study we construct a simple lattice model for diamond growth on graphite as {l angle}111{r angle}{sub diamond} parallel to {l angle}0001{r angle}{sub graphite} and {l angle}110{rmore » angle}{sub diamond} parallel to {l angle}11{bar 2}0{r angle}{sub graphite}.« less
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  • The chemical vapor deposition (CVD) of copper from (hexafluoroacetylacetonate)(vinyltrimethylsilane)-copper(I) [Cu[sup I](hfac)(vtms)] and the thermal evaporation of copper on pyromellitic dianhydride-oxydianiline (PMDA-ODA) polyimide have been studied with a variety of techniques including reflection absorption infrared spectroscopy (RAIRS), ellipsometry, X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and atomic force microscopy (AFM). Our studies reveal that the nucleation and growth of Cu by CVD occurs by the preferential reaction of surface carbonyl groups, (C=O)[sub a], of PMDA-ODA with the CVD reagent. Preferential trapping of thermally deposited metal atoms also has been seen, although the nucleation processes appear to be less chemically specificmore » than is seen in CVD growth on this substrate. Carbonyl groups at the surface of the polyimide react with the precursor molecules at 300 K, although the reactive sticking probabilities appear to be low ([much lt]10[sup [minus]3]). The facility of nucleation on the polyimide surface depends on both the number and orientation of the carbony groups on the polymer surface which, in turn, depends sensitively on the thickness of the film. The nucleation of Cu growth from Cu[sup I](hfac)(vtms) is found to proceed from surface reactions mediated by these surface groups. 63 refs., 19 figs., 2 tabs.« less