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Nucleation and growth of diamond on carbon-implanted single crystal copper surfaces

Journal Article · · Journal of Materials Research; (United States)
; ;  [1];  [2]
  1. Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States)
  2. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
The nucleation and growth of diamond crystals on single crystal copper surfaces has been studied. Microwave plasma enhanced chemical vapor deposition (MPECVD) was used for diamond nucleation and growth. Prior to diamond nucleation, the single crystal copper surface is modified by carbon ion implantation at an elevated temperature ({similar to}820 {degree}C). This procedure leads to the formation of a graphite film on the copper surface, resulting in an enhancement of diamond crystallite nucleation. A simple lattice model has been constructed to describe the mechanism of diamond nucleation on graphite as {l angle}111{r angle}{sub diamond} parallel to {l angle}0001{r angle}{sub graphite} and {l angle}110{r angle}{sub diamond} parallel to {l angle}1120{r angle}{sub graphite}. This leads to a good understanding of diamond growth on carbon-implanted copper surfaces.
DOE Contract Number:
FG02-87ER45314; AC05-84OR21400
OSTI ID:
7049274
Journal Information:
Journal of Materials Research; (United States), Journal Name: Journal of Materials Research; (United States) Vol. 7:9; ISSN JMREE; ISSN 0884-2914
Country of Publication:
United States
Language:
English