Mechanism for diamond nucleation and growth on single crystal copper surfaces implanted with carbon

Journal Article · Mon Apr 27 04:00:00 EDT 1992 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.107096· OSTI ID:7047709

Ong, T P; Xiong, F; Chang, R P.H. ^[1]; White, C W ^[2]

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1. Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States)
2. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

The nucleation and growth of diamond crystals on single-crystal copper surfaces implanted with carbon ions has been studied. Microwave plasma-enhanced chemical vapor deposition was used for diamond growth. The single-crystal copper substrates were implanted either at room temperature or at elevated temperature ({similar to}820 {degree}C) with carbon ions prior to diamond nucleation. This procedure leads to the formation of a graphite film on the copper surface which greatly enhances diamond crystallite nucleation. From our study we construct a simple lattice model for diamond growth on graphite as {l angle}111{r angle}{sub diamond} parallel to {l angle}0001{r angle}{sub graphite} and {l angle}110{r angle}{sub diamond} parallel to {l angle}11{bar 2}0{r angle}{sub graphite}.

• DOE Contract Number: AC05-84OR21400
• OSTI ID: 7047709
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 60:17; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
CARBON
CARBON IONS
CHARGED PARTICLES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COPPER
CRYSTAL GROWTH
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DEPOSITION
DIAMONDS
ELEMENTAL MINERALS
ELEMENTS
EPITAXY
GRAPHITE
ION IMPLANTATION
IONS
METALS
MINERALS
NONMETALS
NUCLEATION
SPACERS
SURFACE COATING
TRANSITION ELEMENTS