Surface photovoltage and band bending at metal/GaAs interfaces: A contact potential difference and photoemission spectroscopy study

Conference · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

OSTI ID:7047688

Mao, D; Kahn, A; Santos, M; Shayegan, M ^[1]; Lay, G le ^[2]; Marsi, M; Hwu, Y ^[3]; Margaritondo, G ^[4]; Florez, L T; Harbison, J P ^[5]

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1. Princeton Univ., NJ (United States)
2. Univ. de Provence, Marseille (France)
3. Univ. of Wisconsin, Madison (United States)
4. Inst. de Physique Appliquee, Lausanne (Switzerland)
5. Bellcore, Red Bank, NJ (United States)

Contact potential difference (CPD) measurements using a Kelvin probe could with synchrotron radiation are used to investigate various aspects of the problem of surface photovoltage (SPV) induced by the synchrotron radiation at (110) and (100) GaAs surfaces. A large and quasipermanent SPV is found at surfaces of low doped and low temperature (110) samples. SPV discharge mechanisms are investigated. Finally, the CPD technique is used to define conditions which minimize SPV and allow accurate measurements of band bending at low temperature. Band bending measurements are reported for interfaces between metals and (110) and (100) GaAs surfaces.

• OSTI ID: 7047688
• Report Number(s): CONF-910115--
• Conference Information: Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Journal Volume: 9:4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ARSENIC COMPOUNDS
ARSENIDES
ELECTRIC CONTACTS
ELECTRIC POTENTIAL
ELECTRICAL EQUIPMENT
ELECTRONIC STRUCTURE
ELEMENTS
EMISSION
EMISSION SPECTROSCOPY
EQUIPMENT
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTERFACES
METALS
OPTICAL PROPERTIES
PHOTOELECTROMAGNETIC EFFECTS
PHOTOEMISSION
PHOTOVOLTAIC EFFECT
PHYSICAL PROPERTIES
PNICTIDES
SECONDARY EMISSION
SPECTROSCOPY