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U.S. Department of Energy
Office of Scientific and Technical Information

Method of making a piezoelectric shear wave resonator

Patent ·
OSTI ID:7045767

A method is described of depositing a film of piezoelectric material on a substrate, the film having a uniform, controlled, inclined C-axis orientation comprising: providing a dc planar reactive sputtering system having a chamber containing a cathode for holding a target, an anode spaced from and parallel to the cathode for holding the substrate and a reactive gas, establishing an electrical field between the cathode and the anode to sputter the target such that the target material ionizes to form an ion flux which reacts with the reactive gas forming the piezoelectric material which deposits on the substrate, providing a positively biased control electrode in the chamber near the substrate and establishing a second, dc electrical field between the control electrode and the anode to collect the electron current and control the ion flux. The electrode position and the strength of the dc field are sufficient to alter the direction of the ion flux as it strikes the substrate to control the orientation of the C-axis away from the direction of the control electrode. The distance of the electrode above the plane of the substrate and the strength of the second electrical field control the degree of inclination of the C-axis, thereby forming a film of piezoelectric material having a uniform, controlled, inclined C-axis.

Assignee:
Dept. of Energy, Washington, DC
Patent Number(s):
US 4640756
OSTI ID:
7045767
Country of Publication:
United States
Language:
English