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Study of epitaxial platinum thin films grown by metalorganic chemical vapor deposition

Journal Article · · Journal of Applied Physics; (United States)
DOI:https://doi.org/10.1063/1.352293· OSTI ID:7040206
; ;  [1];  [2]; ; ;  [3]
  1. School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)
  2. Bell Communications Research, Red Bank, New Jersey 07701-7020 (United States)
  3. Solid State Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee 37831 (United States)

The metalorganic chemical vapor deposition technique has been successfully applied to the growth of epitaxial platinum thin films on (100) surfaces of single-crystal potassium tantalate (KTaO{sub 3}) and strontium titanate (SrTiO{sub 3}). Platinum thin films grown on KTaO{sub 3} (100) at a rate of 70 nm/h showed strong Rutherford backscattering spectroscopy (RBS)/channeling effects with a {chi}{sub min} of 4%. In-plane {phi} and {theta}-2{theta} scan x-ray diffraction analysis demonstrated the three-dimensional epitaxial alignment of the platinum film with the KTaO{sub 3} substrate. Transmission electron micrographs viewed in cross section provided additional information regarding the nature of the epitaxial Pt-KTaO{sub 3} interface. The room-temperature resistivity of a 60-nm-thick Pt film on KTaO{sub 3} (100) was 12.0 {mu}{Omega} cm. X-ray diffraction and pole-figure analysis showed that in the case of Pt films deposited on either fused quartz or Si (100) surfaces, the resulting films were polycrystalline and were fully textured with {lt}111{gt} orientations perpendicular to the substrate surfaces.

DOE Contract Number:
AC05-84OR21400
OSTI ID:
7040206
Journal Information:
Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 72:8; ISSN 0021-8979; ISSN JAPIA
Country of Publication:
United States
Language:
English