Is there an elastic anomaly for a (001) monolayer of InAs embedded in GaAs

Journal Article · Mon Jul 11 04:00:00 EDT 1994 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.112660· OSTI ID:7037002

Bernard, J E ^[1]; Zunger, A ^[2]

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1. Department of Physics, Colorado School of Mines, Golden, Colorado 80401 (United States)
2. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

When a coherently grown (001)-oriented layer of InAs is embedded in a GaAs host, the coherency strain induces a perpendicular distortion of the embedded layer, predicted by continuum elasticity theory to be [epsilon][sub [perpendicular]]=7.3%. Brandt, Ploog, Bierwolf, and Hohenstein, [Phys. Rev. Lett. [bold 68], 1339 (1992)] have described a high-resolution electron microscopic analysis of such buried layers that appears to reveal a breakdown of continuum elasticity theory in the limit of monolayer films. In particular, they found for a single monolayer of InAs a lattice distortion that corresponds to [epsilon][sub [perpendicular]]=12.5%. Here we report on an investigation into whether a first-principles local-density total energy minimization shows such an elastic anomaly in the monolayer limit. We find that it does not.

• DOE Contract Number: AC36-83CH10093
• OSTI ID: 7037002
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 65:2; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ARSENIC COMPOUNDS
ARSENIDES
ELASTICITY
ENERGY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LAYERS
MECHANICAL PROPERTIES
NUMERICAL SOLUTION
PNICTIDES
RELAXATION
SUBSTRATES
TENSILE PROPERTIES