Molecular beam epitaxial growth and transmission electron microscopy studies of thin GaAs/InAs(100) multiple quantum well structures

Journal Article · Wed May 01 04:00:00 EDT 1985 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95788· OSTI ID:6308675

Grunthaner, F J; Fernandez, R; Lewis, B F; Yen, M Y; Lee, T C; Madhukar, A

GaAs/InAs(100) multiple interface structures involving 7.4 percent lattice mismatch have been fabricated via molecular beam epitaxy and examined via transmission electron microscopy. It is found that high-quality, dislocation-free interfaces involving such high lattice mismatch can indeed be experimentally realized for very thin layers provided proper care is given to achieve a balance between the growth kinetics and the thermodynamics leading to the equilibrium ground state of the strained layer. The compressive strain is homogeneously accommodated and a tetragonal distortion is induced in the InAs layer with a perpendicular lattice constant in close agreement with that expected on the basis of the continuum theory and elastic constants of bulk InAs. 13 references.

• Research Organization: California Institute of Technology, Pasadena; Southern California Univ., Los Angeles
• OSTI ID: 6308675
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 46; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
DIFFRACTION
ELECTRON DIFFRACTION
ELECTRON MICROSCOPY
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LATTICE PARAMETERS
MICROSCOPY
MOLECULAR BEAM EPITAXY
PNICTIDES
SCATTERING