Electron transmission probabilities through GaAs/strained GaAsP/GaAs(100) heterostructures

Journal Article · Tue Sep 01 04:00:00 EDT 1981 · J. Vac. Sci. Technol.; (United States)

DOI:https://doi.org/10.1116/1.571135· OSTI ID:6124331

Osbourn, G C

Results of a tight binding calculation of the transmission probabilities of electrons through GaAs/strained GaAsP/GaAs(100) heterostructures are presented. The GaAsP layer thicknesses considered are sufficiently thin that the GaAs/GaAsP lattice mismatch is accommodated by layer strain rather than dislocation generation. For layers with small GaP content, incident electrons in Bloch states near GAMMA can transport through the alloy in Bloch states that are also near GAMMA. Transmission probabilities are large and exhibit resonant (total) transmission at GaAsP layer thicknesses determined by the wavevector k of the accessible GaAsP Bloch states. For layers with large GaP content, incident electrons must either ''tunnel'' through the GaAsP evanescent states associated with the GAMMA minimum or undergo phononless intervalley transfer at the interface to the accessible Bloch states near X in GaAsP. For extremely thin GaAsP layer (less than a few lattice constants), the tunneling type process dominates. The phononless intervalley transfer process is found to occur with very small probability except for carrier energies and layer thicknesses corresponding to resonant transmission.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• OSTI ID: 6124331
• Journal Information: J. Vac. Sci. Technol.; (United States), Journal Name: J. Vac. Sci. Technol.; (United States) Journal Issue: 3 Vol. 19:3; ISSN JVSTA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
BLOCH THEORY
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISLOCATIONS
ELECTRONS
ELEMENTARY PARTICLES
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
LAYERS
LCAO METHOD
LEPTONS
LINE DEFECTS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
TRANSMISSION
TUNNEL EFFECT