Flat-Plate Solar Array Project process development area, process research of non-CZ silicon material. Quarterly report No. 3, April 1, 1984-June 30, 1984

Technical Report · Sun Jul 01 04:00:00 EDT 1984

DOI:https://doi.org/10.2172/7035019· OSTI ID:7035019

Campbell, R. B.

The program is designed to investigate the fabrication of solar cells on N-type base material by a simultaneous diffusion of N-type and P-type dopants to form an P/sup +/NN/sup +/ structure. The results of simultaneous diffusion experiments are being compared to cells fabricated using sequential diffusion of dopants into N-base material in the same resistivity range. The process used for the fabrication of the simultaneously diffused P/sup +/NN/sup +/ cells follows the standard Westinghouse baseline sequence for P-base material except that the two diffusion processes (boron and phosphorus) are replaced by a single diffusion step. All experiments are carried out on N-type dendritic web grown in the Westinghouse pre-pilot facility. The resistivities vary from 0.5 ..cap omega..cm to 5 ..cap omega..cm. The dopant sources used for both the simultaneous and sequential diffusion experiments are commercial metallorganic solutions with phosphorus or boron components. After these liquids are applied to the web surface, they are baked to form a hard glass which acts as a diffusion source at elevated temperatures. In experiments performed thus far, cells produced in sequential diffusion tests have properties essentially equal to the baseline N/sup +/PP/sup +/ cells. However, the simultaneous diffusions have produced cells with much lower IV characteristics mainly due to cross-doping of the sources at the diffusion temperature. This cross-doping is due to the high vapor pressure phosphorus (applied as a metallorganic to the back surface) diffusion through the SiO/sub 2/ mask and then acting as a diffusant source for the front surface.

• Research Organization: Westinghouse Electric Corp., Pittsburgh, PA (USA). Advanced Energy Systems Div.
• DOE Contract Number: NAS-7-100-956616
• OSTI ID: 7035019
• Report Number(s): DOE/JPL/956616-83/3; WAESD-TR-84-0026; ON: DE84013945
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CRYSTAL DOPING
CRYSTAL GROWTH METHODS
DENDRITIC WEB GROWTH METHOD
DIFFUSION
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
EQUIPMENT
FABRICATION
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT