Process research of non-CZ silicon material. Quarterly report No. 2, January 1, 1984-March 31, 1984

Technical Report · Tue May 01 04:00:00 EDT 1984

DOI:https://doi.org/10.2172/6980878· OSTI ID:6980878

Campbell, R. B.

In this program, which started November 4, 1983, the fabrication of solar cells on N-base material using simultaneous diffusion of liquid boron and phosphorus dopants to from the desired P/sup +/NN/sup +/ cell structure is being studied. This simultaneous junction formation method is being compared to the sequential junction formation method where phosphorus is diffused to form an N/sup +/N back surface field followed by a boron diffusion for the P/sup +/N front junction. During the contract, the sensitivity of the process parameters will also be studied; and a cost analysis of the new junction formation process will be performed using SAMICS-IPEG methodology.

• Research Organization: Westinghouse Electric Corp., Pittsburgh, PA (USA). Advanced Energy Systems Div.
• DOE Contract Number: NAS-7-100-956616
• OSTI ID: 6980878
• Report Number(s): DOE/JPL/956616-83/2; WAESD-TR-84-0013; ON: DE84011548
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
BORON
CRYSTAL DOPING
CRYSTAL GROWTH METHODS
DENDRITIC WEB GROWTH METHOD
DIFFUSION
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
FABRICATION
NONMETALS
PHOSPHORUS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT