Nucleation and Growth of GaN on GaAs (001) Substrates
Journal Article
·
· Journal of Applied Physics
OSTI ID:7035
- Sandia National Laboratories
The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 7035
- Report Number(s):
- SAND99-1108J; ON: DE00007035
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics
- Country of Publication:
- United States
- Language:
- English
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