Deep level transient spectroscopy analysis of fast ion tracks in silicon

Journal Article · Thu Feb 01 04:00:00 EST 1990 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.345702· OSTI ID:7031761

Hallen, A; Sundqvist, B U.R. ^[1]; Paska, Z; Svensson, B G ^[2]; Rosling, M; Tiren, J ^[3]

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1. Division of Ion Physics, Department of Radiation Sciences, Uppsala University, P. O. Box 535, S-751 21 Uppsala, Sweden (SE)
2. Solid State Electronics, The Royal Institute of Technology, P. O. Box 1298, S-164 28 Kista-Stockholm, (Sweden)
3. Department of Electronics, Uppsala University, P. O. Box 534, S-751 21 Uppsala, (Sweden)

Deep level transient spectroscopy measurements of electron traps in MeV proton- and alpha-irradiated {ital n}-type silicon have been performed. Six deep levels are found in proton-irradiated samples, while only three appear after alpha irradiation. The influence of the irradiation dose on the defect production is investigated together with the depth concentration profiles. The profiles scale with the nuclear energy deposition, but in the case of the doubly negative charged state of the divacancy at {ital E}{sub {ital C}} {minus}0.24 eV, the peak concentration at the end of the track is less pronounced relative to the tail region towards the surface. It is proposed that the singly negative charged state at {ital E}{sub {ital C}} {minus}0.42 is more probable in a highly distorted lattice and it is shown that the formation of the singly negative charged state of the divacancy dominates the defect production for higher doses.

• OSTI ID: 7031761
• Journal Information: Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 67:3; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
BARYONS
CHARGED PARTICLES
COLLISIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEEP LEVEL TRANSIENT SPECTROSCOPY
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
ENERGY RANGE
FERMIONS
HADRONS
HELIUM IONS
ION COLLISIONS
IONS
LEPTONS
LOW TEMPERATURE
MATERIALS
MEDIUM TEMPERATURE
MEV RANGE
N-TYPE CONDUCTORS
NUCLEONS
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
PROTONS
RADIATION EFFECTS
SCALING LAWS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SPECTROSCOPY
TRAPS
VACANCIES