Elementary excitations in narrow-gap semiconductors by picosecond infrared pulses. Final report 1 Jan 77-31 Dec 81

Technical Report · Mon Feb 23 04:00:00 EST 1981

OSTI ID:7031474

Nurmikko, A V

In this grant research, we have demonstrated efficient switching of high-power carbon dioxide laser radiation at picosecond speeds in the narrow-gap semiconductors indium antimonide, lead telluride, and mercury cadmium telluride. Excitation from a modelocked Nd: glass laser has been used to generate pulses of 10 micrometer radiation of approximately 2psec in duration by a dense transient electron-hole gas in these materials. This work takes advantage of the unique material properties of the narrow-gap semiconductors.

• Research Organization: Brown Univ., Providence, RI (USA). Dept. of Engineering
• OSTI ID: 7031474
• Report Number(s): AD-A-113039/2
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CARBON DIOXIDE LASERS
CHALCOGENIDES
ELECTROMAGNETIC RADIATION
ENERGY-LEVEL TRANSITIONS
EQUIPMENT
EXCITATION
GAS LASERS
INDIUM COMPOUNDS
INFRARED RADIATION
LASERS
LEAD COMPOUNDS
MERCURY COMPOUNDS
OPTICAL EQUIPMENT
Q-SWITCHING
RADIATIONS
TELLURIDES
TELLURIUM COMPOUNDS