Friction behavior of semiconductors Si and GaAs in contact with pure metals
This paper examines the tribology of the semiconductors silicon (Si) and gallium arsenide (GA) in contact with pure metals. Five transition and two nontransition metals, titanium, tantalum, nickel, palladium, platinum, copper and silver, were slid on a single crystal Si surface. Four metals; indium, nickel, copper and silver, were slid on a single crystal GA surface. Results indicated that the sliding of Si on the transition metals exhibited relatively higher friction than for the nontransition metals in contact with Si. There was a clear correlation between friction and Schottky barrier height formed at the metal-Si interface for the transition metals. Transition metals with a higher barrier height on Si had a lower friction the same as for GA in contact with metals.
- Research Organization:
- National Aeronautics and Space Administration, Cleveland, OH (USA). Lewis Research Center
- OSTI ID:
- 7031449
- Report Number(s):
- NASA-TM-83779
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420000* -- Engineering
ARSENIC COMPOUNDS
ARSENIDES
COPPER
CRYSTALS
ELEMENTS
FRICTION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM
MATERIALS
METALS
MONOCRYSTALS
NICKEL
PALLADIUM
PLATINUM
PLATINUM METALS
PNICTIDES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SILVER
SLIDING FRICTION
TANTALUM
TITANIUM
TRANSITION ELEMENTS
TRIBOLOGY