Boron phosphide on silicon for radiation detectors

Conference · Sat Dec 31 23:00:00 EST 1988

DOI:https://doi.org/10.1557/PROC-162-601· OSTI ID:7029441

Lund, J C; Olschner, F; Shah, K S ^[1]; Ahmed, F ^[2]

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1. Radiation Monitoring Devices, Inc., Watertown, MA (USA)
2. Devcom, Inc., Framingham, MA (USA)

We report on radiation detectors fabricated from boron phosphide (BP) layers. These devices were fabricated by growing 1 to 10 {mu}m thick layers of BP by chemical vapor deposition (CVD) on (100) oriented n-type silicon substrates. Ohmic contacts were applied to the Si (Au--Sb). Schottky barrier contacts (also Au--Sb) were applied to the BP layer. The devices were tested as radiation detectors and were found to be capable of detecting individual 5.5 MeV alpha particles. With some improvements we hope to fabricate neutron detectors from these devices, making use of the very high cross-section of boron for thermal neutrons. 10 refs., 2 figs.

• Research Organization: Radiation Monitoring Devices, Inc., Watertown, MA (USA); Devcom, Inc., Framingham, MA (USA)
• Sponsoring Organization: DOE/ER
• DOE Contract Number: AC01-89ER80818
• OSTI ID: 7029441
• Report Number(s): CONF-891119-119; ON: DE90009562
• Country of Publication: United States
• Language: English

Related Subjects

440103* -- Radiation Instrumentation-- Nuclear Spectroscopic Instrumentation
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALPHA DETECTION
BORON COMPOUNDS
BORON PHOSPHIDES
CHARGED PARTICLE DETECTION
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DESIGN
DETECTION
ELEMENTS
MEASURING INSTRUMENTS
NEUTRON DETECTION
NEUTRON DETECTORS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATION DETECTION
RADIATION DETECTORS
SCHOTTKY EFFECT
SEMIMETALS
SILICON
STOPPING POWER
SUBSTRATES
SURFACE COATING