Magnetoresistance of One-Dimensional Subbands in Tunnel-Coupled Double Quantum Wires

Journal Article · Tue Apr 27 00:00:00 EDT 1999 · Physical Review B

OSTI ID:7029

Blount, M A; Lyo, S K; Moon, J S; Reno, J L; Simmons, J A; Wendt, J R

We study the low-temperature in-plane magnetoresistance of tunnel-coupled quasi-one-dimensional quantum wires. The wires are defined by two pairs of mutually aligned split gates on opposite sides of a < 1 micron thick AlGaAs/GaAs double quantum well heterostructure, allowing independent control of their widths. In the ballistic regime, when both wires are defined and the field is perpendicular to the current, a large resistance peak at ~6 Tesla is observed with a strong gate voltage dependence. The data is consistent with a counting model whereby the number of subbands crossing the Fermi level changes with field due to the formation of an anticrossing in each pair of 1D subbands.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 7029
• Report Number(s): SAND99-1060J; ON: DE00007029
• Journal Information: Physical Review B, Journal Name: Physical Review B
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
Magnetoresistance
Heterojunctions
Tunnel Effect
Coupling
Band Theory