Magnetic Anticrossing of 1D Subbands in Coupled Ballistic Double Quantum Wires
We study the low-temperature in-plane magnetoconductance of vertically coupled double quantum wires. Using a novel flip-chip technique, the wires are defined by two pairs of mutually aligned split gates on opposite sides of a s 1 micron thick AlGaAs/GaAs double quantum well heterostructure. We observe quantized conductance steps due to each quantum well and demonstrate independent control of each ID wire. A broad dip in the magnetoconductance at -6 T is observed when a magnetic field is applied perpendicular to both the current and growth directions. This conductance dip is observed only when 1D subbands are populated in both the top and bottom constrictions. This data is consistent with a counting model whereby the number of subbands crossing the Fermi level changes with field due to the formation of an anticrossing in each pair of 1D subbands.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 760048
- Report Number(s):
- SAND99-2769C; TRN: US0005448
- Resource Relation:
- Conference: Surfaces and Interfaces of Mesoscopic Devices Conference (SIMD), Kaanapali, Maui, HI (US), 12/05/1999--12/10/1999; Other Information: PBD: 13 Jul 2000
- Country of Publication:
- United States
- Language:
- English
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