Radiation-induced response of operational amplifiers in low-level transient radiation environments

Conference · Mon Nov 30 23:00:00 EST 1987 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:7021161

Paulos, J J; Bishop, R J; Turflinger, T L

Extensive computer simulations have been performed on CMOS and bipolar operational amplifiers in an attempt to obtain a better understanding of low-level transient radiation response mechanisms. The simulation methodology has been confirmed using flash X-ray data for the amplifiers studied. Variations in circuit response to loading and feedback configuration have been explored, and several generalizations can be made which may provide a useful basis for a specification methodology.

• Research Organization: Dept. of Electrical and Computer Engineering, North Carolina State Univ., Raleigh, NC (US)
• OSTI ID: 7021161
• Report Number(s): CONF-8707112-
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-34:6; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMPLIFIERS
COMPUTERIZED SIMULATION
DYNAMIC LOADS
ELECTRICAL TRANSIENTS
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
ENVIRONMENT
EQUIPMENT
IONIZING RADIATIONS
MOS TRANSISTORS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
RADIOINDUCTION
SEMICONDUCTOR DEVICES
SIMULATION
TECHNOLOGY ASSESSMENT
TRANSIENTS
TRANSISTORS
VARIATIONS
VOLTAGE DROP
X RADIATION