Thermodynamically stable [ital p]-channel strained-layer AlGaAs/InGaAs/GaAs heterostructure field effect transistor
- Sandia National Laboratories, Albuquerque, New Mexico 87185-5800 (United States)
Device characteristics of a thermodynamically stable [ital p]-channel, strained quantum-well heterostructure field effect transistor (HFET) are reported. The AlGaAs/InGaAs/GaAs material system was used to fabricate the [ital p]-channel HFETs with Al and In mole fractions of 0.20 and 0.18, respectively. Transconductances of 32 and 94 mS/mm were achieved at 300 and 77 K, respectively, for devices with 1.2 [mu]m recessed gates. These numbers are comparable to InGaAs quantum-well, recessed gate [ital p]HFETs whose quantum-well thicknesses exceed the thermodynamic stability limit. These results have important implications for high performance self-aligned devices which require high-temperature processing.
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 7018774
- Journal Information:
- Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 65:6; ISSN 0003-6951; ISSN APPLAB
- Country of Publication:
- United States
- Language:
- English
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ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRICAL PROPERTIES
FABRICATION
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
JUNCTIONS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
STABILITY
TEMPERATURE DEPENDENCE
THERMODYNAMIC PROPERTIES
TRANSISTORS