Magnetoresistance and anisotropy of the resistivity in Ni/Nb and Ni/Si multilayers

Journal Article · Tue Nov 15 04:00:00 EST 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.342109· OSTI ID:7017023

Perez-Frias, M T; Flores, J; Vicent, J L

Multilayers of Nb/Ni and Ni/Si have been fabricated by dc triode sputtering. Standard x-ray diffraction in the reflection geometry shows good layering for both systems with several orders in small-angle scans which correspond to the modulation of the films. High-angle scans show that Nb/Ni films growth with (111) texture for Ni layers and (110) for Nb layers. Ni/Si multilayers do not show any texture. Transverse magnetoresistance (TMR), longitudinal magnetoresistance (LMR), and the spontaneous anisotropy of the resistivity (SAR) have been measured with an applied field up to 70 kOe and between 10 and 110 K and bilayer thicknesses between 60 and 200 A. Both systems show LMR and TMR to be very small in comparison with pure Ni films. The SAR effect is temperature independent and increases with bilayer thickness. Also, it is higher for Nb/Ni than Ni/Si multilayers with rho/sub parallel/ >rho/sub perpendicular/ for Ni/Si but rho/sub parallel/

• Research Organization: Departamento Fisica de Materiales, Facultad Ciencias Fisicas, Universidad Complutense, 28040 Madrid, Spain
• OSTI ID: 7017023
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 64:10; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360104* -- Metals & Alloys-- Physical Properties
ANISOTROPY
COHERENT SCATTERING
DIFFRACTION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
FILMS
MAGNETIC PROPERTIES
MAGNETORESISTANCE
METALS
NICKEL
NIOBIUM
PHYSICAL PROPERTIES
SCATTERING
SEMIMETALS
SILICON
THIN FILMS
TRANSITION ELEMENTS
X-RAY DIFFRACTION