Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Epitaxial Y-Ba-Cu-O films on Si with intermediate layer by rf magnetron sputtering

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.100488· OSTI ID:7016406

Epitaxial films of Y-Ba-Cu-O were obtained on a Si substrate, using an epitaxial intermediate layer consisting of BaTiO/sub 3/(or SrTiO/sub 3/)/MgAl/sub 2/O/sub 4/. MgAl/sub 2/O/sub 4/ was epitaxially grown on the Si(100) substrate by chemical vapor deposition. Then, SrTiO/sub 3/ or BaTiO/sub 3/ was also epitaxially grown on the MgAl/sub 2/O/sub 4/ layer by means of rf magnetron sputtering. Epitaxial Y-Ba-Cu-O films were prepared on BaTiO/sub 3/(SrTiO/sub 3/)/MgAl/sub 2/O/sub 4//Si substrates by rf magnetron sputtering. Preparation of an Y-Ba-Cu-O film directly on MgAl/sub 2/O/sub 4//Si was also studied, but only a randomly oriented polycrystalline film has been obtained so far. Resistive superconducting transitions with zero resistance at 65 K on SrTiO/sub 3//MgAl/sub 2/O/sub 4//Si and at 70 K on BaTiO/sub 3//MgAl/sub 2/O/sub 4//Si were observed.

Research Organization:
Fundamental Research Laboratories, NEC Corporation, 4-1-1 Miyazaki, Miyamaeku, Kawasaki, Kanagawa 213, Japan
OSTI ID:
7016406
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:20; ISSN APPLA
Country of Publication:
United States
Language:
English

Similar Records

Epitaxial Y-Ba-Cu-O thin films prepared by rf-magnetron sputtering
Journal Article · Mon Aug 01 00:00:00 EDT 1988 · J. Appl. Phys.; (United States) · OSTI ID:7161158

Fabrication of Eu sub 1 Ba sub 2 Cu sub 3 O sub y thin films and tunnel junctions by magnetron sputtering
Conference · Thu Feb 28 23:00:00 EST 1991 · IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States) · OSTI ID:5932350

Synthesis and characterization of YBa{sub 2}Cu{sub 3}O{sub y} and LaSrGaO{sub y} thin films
Journal Article · Sun Jun 01 00:00:00 EDT 1997 · Advances in Cryogenic Engineering · OSTI ID:482077