Physics and technology development of single-crystal thin-film silicon-on-insulator (TFSOI) CMOS integrated circuits
Design and fabrication of very-large-scale-integration (VLSI) devices and circuits has seen an enormous improvement in the last decade. The major contributing factors have been the advances in fabrication processes, the reduction in device dimensions, and the increasing support from computer-aided-design (CAD) tools. As one embarks on ultra-large-scale-integration (ULSI), size-reduction techniques fail to provide the increased packing density required, and the performance limitations of conventional VLSI planar technology become salient. Thin-film (TF) MOS silicon-on-insulator (SOI) technology offers the possibility of integrating devices of superior performance to conventional bulk MOS transistors. Analysis leads to the design and optimization of TF SOI devices. This work presents the physics and development of an SOI technology based on Epitaxial-Lateral-Overgrowth (ELO) of silicon. Contrary to previous approaches, this technology provides a tool to fabricate devices in high-quality monocrystalline silicon with process parameters that can be modified to attain an optimal device architecture.
- Research Organization:
- Stanford Univ., CA (United States)
- OSTI ID:
- 7016363
- Country of Publication:
- United States
- Language:
- English
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