Improvement of thick a-Si radiation detectors by field profile tailoring

Conference · Wed Apr 01 04:00:00 EST 1992

OSTI ID:7015822

Drewery, J S; Cho, G; Jing, T; Kaplan, S N; Mireshghi, A; Perez-Mendez, V; Wildermuth, D

Application of thick ({approximately}50 {mu}m) a-Si p-i-n diodes as a direct radiation detector for minimum ionizing particles is hampered by the need to apply large bias voltages in order fully to deplete the detecting intrinsic layer, which typically contains 5 {minus} 10 {times} 10{sup 14} ionizable dangling bonds per CM{sup 3}. By insertion of thin p-type layers at intervals within the intrinsic layer, the required depletion voltage can be reduced by a factor of at least 1/(n+l) where n is the number of layers inserted. This principle is demonstrated for devices approximately 12{mu}m in thickness. It is shown that electron losses within the p type layer can be kept to minimum by choice of a low doping concentration for the introduced players.

• Research Organization: Lawrence Berkeley Lab., CA (United States)
• Sponsoring Organization: DOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 7015822
• Report Number(s): LBL-32445; CONF-920402--57; ON: DE92041192
• Country of Publication: United States
• Language: English

Related Subjects

440104* -- Radiation Instrumentation-- High Energy Physics Instrumentation
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
DESIGN
ELECTRON MOBILITY
HOLE MOBILITY
MEASURING INSTRUMENTS
MOBILITY
MODIFICATIONS
PARTICLE MOBILITY
RADIATION DETECTORS
SEMICONDUCTOR DETECTORS
SI SEMICONDUCTOR DETECTORS