Stress effects on Raman measurements of pulsed laser annealed silicon

Journal Article · Sun Jan 01 04:00:00 EST 1984 · Mater. Res. Soc. Symp. Proc.; (United States)

OSTI ID:7009304

Jellison, Jr, G E; Wood, R F

It has recently been shown that the front surface region of the silicon lattice is severely strained during pulsed laser irradiation. This uniaxial strain reduces the symmetry of the front surface region, resulting in additional shifts and splittings of the phonon frequency and changes in the Raman scattering tensor. It is shown that, for the case of pulsed laser irradiation, the phonon frequency is increased, and the 3-fold degenerate optical phonon is split into a singlet and a doublet. The changes in the Raman scattering tensor make it non-symmetric, and generally invalidate the technique used by Compaan et al. to determine the cross section experimentally. The complications introduced by the presence of stress during pulsed laser annealing, coupled with the temperature dependence of the optical and Raman tensors, make a simple interpretation of the Stokes to anti-Stokes ratio in terms of lattice temperature extremely unreliable. 19 references, 1 figure.

• Research Organization: Oak Ridge National Lab., TN
• DOE Contract Number: W-7405-ENG-26
• OSTI ID: 7009304
• Journal Information: Mater. Res. Soc. Symp. Proc.; (United States), Journal Name: Mater. Res. Soc. Symp. Proc.; (United States) Vol. 23; ISSN MRSPD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360102* -- Metals & Alloys-- Structure & Phase Studies
ANNEALING
CHEMICAL REACTIONS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DATA
DECOMPOSITION
ELEMENTS
EXPERIMENTAL DATA
HEAT TREATMENTS
INFORMATION
LASER SPECTROSCOPY
LASERS
NUMERICAL DATA
PHONONS
PHOTOCHEMICAL REACTIONS
PHOTOLYSIS
QUASI PARTICLES
RAMAN EFFECT
RAMAN SPECTROSCOPY
SEMIMETALS
SILICON
SPECTROSCOPY
STRESSES