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Detailed examination of time-resolved pulsed Raman temperature measurements of laser annealed silicon

Conference ·
OSTI ID:6657334
Raman temperature measurements during pulsed laser annealing of Si by Compaan and co-workers are critically examined. It has been shown previously that the Stokes to anti-Stokes ratio depends critically upon the optical properties of silicon as a function of temperature. These dependences, coupled with the large spatial and temporal temperature gradients normally found immediately after the high reflectivity phase, result in large variations in the calculated temperature depending upon the probe laser pulse width and the pulse-to-pulse and spatial variations in the annealing pulse energy density.
Research Organization:
Oak Ridge National Lab., TN (USA)
DOE Contract Number:
W-7405-ENG-26
OSTI ID:
6657334
Report Number(s):
CONF-821107-28; ON: DE83003440
Country of Publication:
United States
Language:
English