Detailed examination of time-resolved pulsed Raman temperature measurements of laser annealed silicon
Conference
·
OSTI ID:6657334
Raman temperature measurements during pulsed laser annealing of Si by Compaan and co-workers are critically examined. It has been shown previously that the Stokes to anti-Stokes ratio depends critically upon the optical properties of silicon as a function of temperature. These dependences, coupled with the large spatial and temporal temperature gradients normally found immediately after the high reflectivity phase, result in large variations in the calculated temperature depending upon the probe laser pulse width and the pulse-to-pulse and spatial variations in the annealing pulse energy density.
- Research Organization:
- Oak Ridge National Lab., TN (USA)
- DOE Contract Number:
- W-7405-ENG-26
- OSTI ID:
- 6657334
- Report Number(s):
- CONF-821107-28; ON: DE83003440
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
656000 -- Condensed Matter Physics
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
ELEMENTS
HEAT TREATMENTS
HEATING
LASER SPECTROSCOPY
LASER-RADIATION HEATING
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PLASMA HEATING
RAMAN SPECTRA
SEMIMETALS
SILICON
SPECTRA
SPECTROSCOPY
TEMPERATURE DEPENDENCE
TEMPERATURE GRADIENTS
TEMPERATURE MEASUREMENT
360602* -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
656000 -- Condensed Matter Physics
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
ELEMENTS
HEAT TREATMENTS
HEATING
LASER SPECTROSCOPY
LASER-RADIATION HEATING
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PLASMA HEATING
RAMAN SPECTRA
SEMIMETALS
SILICON
SPECTRA
SPECTROSCOPY
TEMPERATURE DEPENDENCE
TEMPERATURE GRADIENTS
TEMPERATURE MEASUREMENT