High-performance, lattice-mismatched InGaAs/InP monolithic interconnected modules (MIMs)
- Essential Research, Inc., Cleveland, Ohio (United States)
High performance, lattice-mismatched p/n InGaAs/InP monolithic interconnected module (MIM) structures were developed for thermophotovoltaic (TPV) applications. A MIM device consists of several individual InGaAs photovoltaic (PV) cells series-connected on a single semi-insulating (S.I.) InP substrate. Both interdigitated and conventional (i.e., non-interdigitated) MIMs were fabricated. The energy bandgap (Eg) for these devices was 0.60 eV. A compositionally step-graded InPAs buffer was used to accommodate a lattice mismatch of 1.1{percent} between the active InGaAs cell structure and the InP substrate. 1{times}1-cm, 15-cell, 0.60-eV MIMs demonstrated an open-circuit voltage (Voc) of 5.2 V (347 mV per cell) and a fill factor of 68.6{percent} at a short-circuit current density (Jsc) of 2.0 A/cm{sup 2}, under flashlamp testing. The reverse saturation current density (Jo) was 1.6{times}10{sup {minus}6}&hthinsp;A/cm{sup 2}. Jo values as low as 4.1{times}10{sup {minus}7}&hthinsp;A/cm{sup 2} were also observed with a conventional planar cell geometry. {copyright} {ital 1999 American Institute of Physics.}
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 700923
- Report Number(s):
- CONF-981055-; ISSN 0094-243X; TRN: 9913M0002
- Journal Information:
- AIP Conference Proceedings, Vol. 460, Issue 1; Conference: 4. National Renewable Energy Laboratory (NREL) conference on thermophotovoltaic generation of electricity, Denver, CO (United States), 11-14 Oct 1998; Other Information: PBD: Mar 1999
- Country of Publication:
- United States
- Language:
- English
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InGaAs monolithic interconnected modules (MIMs)
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