Neutron-induced latch-up immunity in metal gate CMOS integrated circuits
Conference
·
· IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:7006016
Neutron-induced latch-up immunity has been studied in metal gate CMOS integrated circuits as a function of neutron fluence by measuring both the current gain products (beta product) of parasitic NPN and PNP transistors, and the flash x-ray latch-up thresholds prior to and following irradiation and subsequent stabilization anneal. Correlations between the actual latch-up thresholds and the measured beta products are established for the three part types investigated. These correlations indicate that the measurement of beta products on judiciously chosen parasitic transistors is a viable technique for estimating latch-up susceptibility when the observed margin is substantial.
- Research Organization:
- The Aerospace Corp., El Segundo, CA (US)
- OSTI ID:
- 7006016
- Report Number(s):
- CONF-8707112-
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-34:6; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
654003 -- Radiation & Shielding Physics-- Neutron Interactions with Matter
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
BEAMS
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
EVALUATION
IONIZING RADIATIONS
MOS TRANSISTORS
NEUTRON BEAMS
NUCLEON BEAMS
PARTICLE BEAMS
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
TECHNOLOGY ASSESSMENT
TESTING
TRANSISTORS
X RADIATION
360605* -- Materials-- Radiation Effects
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
654003 -- Radiation & Shielding Physics-- Neutron Interactions with Matter
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
BEAMS
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
EVALUATION
IONIZING RADIATIONS
MOS TRANSISTORS
NEUTRON BEAMS
NUCLEON BEAMS
PARTICLE BEAMS
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
TECHNOLOGY ASSESSMENT
TESTING
TRANSISTORS
X RADIATION