Correlation between mechanical stress and hydrogen-related effects on radiation-induced damage in MOS structures

Conference · Tue Dec 01 00:00:00 EST 1987 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:7005993

Kasama, K; Tsukiji, M; Kobayashi, K

Correlation between mechanical stress and hydrogen effects on radiation damage in polycide-gate MOS capacitors was investigated as a function of gate-oxide thickness. The compressive stress magnitude was altered by varying the silicide (TiSi/sub 2/ or WSi/sub 2/) thickness in the polycide-gate electrode, and hydrogen introduction into gate-SiO/sub 2/ film was carried out by diffusion from plasma-deposited silicon-nitride passivation film (SiN-Cap). In a MOS capacitor without passivation film (No-Cap sample), it was found that compressive stress on gate-SiO/sub 2/ reduces both positive charge build-up (..delta..Qot) and interface-trap generation (..delta..Dit). Radiation induced shift, ..delta..Qot exhibits a smaller stress effect as compared with ..delta..Dit. As gate-SiO/sub 2/ thickness decreases, the stress effect on ..delta..Qot increases, while this effect on ..delta..Dit remains nearly constant. This compressive stress effect was inhibited by hydrogen diffusion, especially in ..delta..Dit. In addition, both stress effects on ..delta..Qot and ..delta..Dit in SiN-Cap samples show a gate-oxide thickness dependence similar to that on ..delta..Qot in No-Cap samples. The stress effect observed in No-Cap samples can be explained on the basis of the bond reformation process at the SiO/sub 2/Si interface and near the electrodeSiO/sub 2/ interface. In a SiN-Cap sample, hydrogen is highly distributed at the SiO/sub 2/Si interface region and hydrogen-related interface-trap generation may occur at this interface region. As a result, only the stress effect near the gate-electrode was observed in SiN-Cap samples.

• Research Organization: NEC Corp., 1120, Shimokuzawa, Sagamihara, Kanagawa 229 (JP)
• OSTI ID: 7005993
• Report Number(s): CONF-8707112-; TRN: 88-021963
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Vol. NS-34:6; Conference: Annual conference on nuclear and space radiation effects, Snowmass Village, CO, USA, 28 Jul 1987
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
42 ENGINEERING
MOS TRANSISTORS
PHYSICAL RADIATION EFFECTS
SILICON OXIDES
TITANIUM SILICIDES
TUNGSTEN SILICIDES
CORRELATIONS
ELECTRODES
HYDROGEN
MECHANICAL PROPERTIES
OXIDES
SEMICONDUCTOR DEVICES
STRESS ANALYSIS
THICKNESS
TRAPPED ELECTRONS
CHALCOGENIDES
DIMENSIONS
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
LEPTONS
NONMETALS
OXYGEN COMPOUNDS
RADIATION EFFECTS
REFRACTORY METAL COMPOUNDS
SILICIDES
SILICON COMPOUNDS
TITANIUM COMPOUNDS
TRANSISTORS
TRANSITION ELEMENT COMPOUNDS
TUNGSTEN COMPOUNDS
360605* - Materials- Radiation Effects
654001 - Radiation & Shielding Physics- Radiation Physics
Shielding Calculations & Experiments
420800 - Engineering- Electronic Circuits & Devices- (-1989)