Ion-assisted pulsed laser deposition of cubic boron nitride films

Journal Article · Thu Sep 01 00:00:00 EDT 1994 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.357491· OSTI ID:7004968

Friedmann, T A; Mirkarimi, P B; Medlin, D L; McCarty, K F; Klaus, E J; Boehme, D R; Johnsen, H A; Mills, M J; Ottesen, D K ^[1]; Barbour, J C ^[2]

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1. Sandia National Laboratories, Livermore, California 94551 (United States)
2. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

In addition, the IR-active [ital c]-BN mode narrows considerably as the deposition temperature increases, suggesting that the [ital c]-BN material has fewer defects or larger grain size. It is found that films with a high [ital c]-BN percentage are deposited only in a narrow window of ion/atom arrival values that are near unity at beam energies between 800 and 1200 eV. Below this window the deposited films have a low [ital c]-BN percentage, and above this window the deposited film is completely resputtered. Using FTIR analysis, it is found that the [ital c]-BN percentage in these samples is dependent upon growth time. The initial deposit is essentially all [ital sp][sup 2]-bonded material and [ital sp][sup 3]-bonded material forms above this layer. Consistently, cross-section TEM samples reveal this layer to consist of an amorphous BN layer ([similar to]30 A thick) directly on the Si substrate followed by highly oriented turbostratic BN ([similar to]300 A thick) and finally the [ital c]-BN layer. The [ital h]-BN/[ital t]-BN interfacial layer is oriented with the 002 basal planes perpendicular to the plane of the substrate. Importantly, the position of the [ital c]-BN IR phonon changes with growth time. Initially this mode appears near 1130 cm[sup [minus]1] and decreases with growth time to a constant value of 1085 cm[sup [minus]1]. Since in bulk [ital c]-BN the IR mode appears at 1065 cm[sup [minus]1], a large compressive stress induced by the ion bombardment is suggested. Possible mechanisms are commented on for the conversion process to [ital c]-BN based upon the results.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 7004968
• Journal Information: Journal of Applied Physics; (United States), Vol. 76:5; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON NITRIDES
DEPOSITION
ABLATION
CRYSTAL STRUCTURE
CUBIC LATTICES
ELECTRON DIFFRACTION
ELECTRON MICROSCOPY
INFRARED SPECTRA
ION BEAMS
LASER RADIATION
POLYCRYSTALS
THIN FILMS
BEAMS
BORON COMPOUNDS
COHERENT SCATTERING
CRYSTAL LATTICES
CRYSTALS
DIFFRACTION
ELECTROMAGNETIC RADIATION
FILMS
MICROSCOPY
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
RADIATIONS
SCATTERING
SPECTRA
360606* - Other Materials- Physical Properties- (1992-)