Mapping of local temperatures on mirrors of GaAs/AlGaAs laser diodes

Journal Article · Mon Mar 12 04:00:00 EST 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102611· OSTI ID:7004812

Brugger, H; Epperlein, P W ^[1]

---

1. IBM Research Division, Zurich Research Laboratory, CH-8803 Rueschlikon, Switzerland (CH)

Spatially resolved Raman scattering measurements ({lt}1 {mu}m) have been performed to determine the surface temperature distribution on coated and uncoated facets of ridge-waveguided GaAs/AlGaAs single quantum well graded-index separate-confinement heterostructure lasers. A strong nonlinear temperature versus output-power dependence is observed for cleaved, uncoated mirrors ({Delta}{ital T}{gt}100 K for {ital P}{gt}1 MW/cm{sup 2}). Raman line scans show hot spot regions at the facets. Degradation strength correlates with facet heating. Disorder-activated Raman phonon modes indicate strong crystal damage. Laser mirrors with {lambda}/2-Al{sub 2}O{sub 3} coatings withstand up to 4--5 times the power density without significant heating and degradation. Local electroluminescence measurements along the cavity confirm increasing temperatures when approaching the facets and show that the resonator bulk material remains cold ({Delta}{ital T}{lt}5 K).

• OSTI ID: 7004812
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:11; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ACCURACY
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CLEAVAGE
COATINGS
CRYSTAL STRUCTURE
ELECTROLUMINESCENCE
ELECTROMAGNETIC RADIATION
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFRARED RADIATION
JUNCTIONS
LASER CAVITIES
LASER SPECTROSCOPY
LASERS
LUMINESCENCE
MICROSTRUCTURE
MIRRORS
MOLECULAR BEAM EPITAXY
NEAR INFRARED RADIATION
NONLINEAR OPTICS
OPTICS
PHONONS
PHYSICAL RADIATION EFFECTS
PNICTIDES
POWER
QUASI PARTICLES
RADIATION EFFECTS
RADIATIONS
RAMAN EFFECT
RESOLUTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SPATIAL RESOLUTION
SPECTROSCOPY
TEMPERATURE DEPENDENCE
TEMPERATURE DISTRIBUTION