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U.S. Department of Energy
Office of Scientific and Technical Information

SIS (superconductor-insulator-superconductor) mixer research. Annual technical report, November 1986-November 1987

Technical Report ·
OSTI ID:7003517
Theoretical and experimental research was conducted to elucidate the basic physics behind the properties of superconductor-insulator-superconductor (SIS) tunnel-junction receiving devices. The saturation of the gain of the SIS mixer was measured using both monochromatic and thermal signals, and these experiments dramatically verified the theoretical expression derived in the previous report period. A study of the role of the image termination for SIS mixer behavior found that the nonlinear quantum reactance results in an effective time delay at the input port of the mixer. Many aspects of the operation of SIS mixers at submillimeter wavelengths were clarified, including a discussion of the potential of the new oxide superconductors for this field. The goal of the realization of high-quality niobium nitride edge junctions was advanced by optimizing the edge profile and by improving the insulating barrier.
Research Organization:
Virginia Univ., Charlottesville (USA). Dept. of Electrical Engineering
OSTI ID:
7003517
Report Number(s):
AD-A-192908/2/XAB; UVA-525658/EE88/102
Country of Publication:
United States
Language:
English