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Mechanism of the ''low-temperature'' oxidation of molybdenum disilicide layers on molybdenum

Journal Article · · Dokl. Phys. Chem. (Engl. Transl.); (United States)
OSTI ID:6998575
Previous studies on the oxidation of molybdenum disilicide layers on molybdenum, produced by diffusion silicization of the metal, lead the authors to conclude that the structural correspondence between the starting material and the reaction product (MoSi/sub 2/ and alpha-quartz, respectively) determines the mechanism of the low-temperature oxidation, and makes the limit of alpha-quartz stability - 1450 C - the upper limit for the operation of this mechanism. The authors consider oxidation kinetics in the low temperature and high temperature regions and find that molybdenum is able to diffuse outward, thus preventing the formation of a MO/sub 5/Si/sub 3/ layer at the SiO/sub 2/-MoSi/sub 2/ interface. As the SiO/sub 2/ film gets thicker, appreciable formation of the Mo/sub 5/Si/sub 3/ layer begins; this is the stage at which the sample gains weight. It is shown that in the high-temperature process all the disilicide silicon is oxidized by a reaction that makes the silicon dioxide volume and mass twice as large as in the lowtemperature process, and prevents MoO/sub 3/ separation in the early stages.
Research Organization:
Institute of Physical Chemistry, Acad. of Sci., Moscow
OSTI ID:
6998575
Journal Information:
Dokl. Phys. Chem. (Engl. Transl.); (United States), Journal Name: Dokl. Phys. Chem. (Engl. Transl.); (United States) Vol. 279:1-3; ISSN DKPCA
Country of Publication:
United States
Language:
English