Two-capacitor method for study of photoelectromotive force in semiconductors

Journal Article · Fri Aug 01 04:00:00 EDT 1986 · Instrum. Exp. Tech. (Engl. Transl.); (United States)

OSTI ID:6998083

Bodrova, T K; Davydov, I A; Protasov, Y V; Seregin, V T

This paper presents a method for measurement of photo emf on the surface or within a semiconductor and in metal-semiconductor and metal dielectric-semiconductor structures that uses, instead of a single Kelvin vibrating capacitor, two capacitors in series: a fixed capacitor with the specimen on one of its plates and a vibrating capacitor, which converts the dc signal to ac. The sensitivity of the circuit which is determined by the ratio of the capacitor values and the noise level of the EVP-8M capacitive vibrating-reed converter (less than 50 uV) is equal to 0.3 mV. The method facilitates studies in the high vacuum and in various media.

• Research Organization: Leningrad State Univ.
• OSTI ID: 6998083
• Journal Information: Instrum. Exp. Tech. (Engl. Transl.); (United States), Journal Name: Instrum. Exp. Tech. (Engl. Transl.); (United States) Vol. 29:1; ISSN INETA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CAPACITORS
CHALCOGENIDES
DESIGN
ELECTRIC MEASURING INSTRUMENTS
ELECTRICAL EQUIPMENT
ELECTROMOTIVE FORCE
EQUIPMENT
MATERIALS
MEASURING INSTRUMENTS
PERFORMANCE TESTING
PHOTOELECTROMAGNETIC EFFECTS
PHOTOVOLTAIC EFFECT
SEMICONDUCTOR MATERIALS
SENSITIVITY
SIGNAL-TO-NOISE RATIO
TELLURIDES
TELLURIUM COMPOUNDS
TESTING