III-V semiconductor quantum-well lasers and related optoelectronic devices (on silicon). Oxide-defined semiconductor quantum-well lasers and optoelectronic devices: Al-based III-V native oxides. Final report
Measurements of the hole density in heavily carbon-doped GaAs and A1x,Gal-xAs as a function of the annealing temperature are presented. It is shown that the hole density increases and the hole mobility decreases after annealing at low temperatures (T < 550 deg C). However, higher annealing temperatures (T > 600 deg C) result in a reduction of the hole concentration reaching a maximum carrier concentration of = 5 x 1019 cm-3. These changes observed in the electrical properties can be explained by two mechanisms: (1) the passivation of carbon acceptors by hydrogen incorporated during growth; and (2) the change in the lattice site location of carbon atoms, which is dependent on the total carbon concentration.
- Research Organization:
- Illinois Univ., Urbana, IL (United States). Dept. of Electrical and Computer Engineering
- OSTI ID:
- 6997168
- Report Number(s):
- AD-A-255239/6/XAB; CNN: DAAL03-89-K-0008
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ALUMINIUM ARSENIDES
ELECTRICAL PROPERTIES
GALLIUM ARSENIDES
SEMICONDUCTOR LASERS
LASER MATERIALS
ANNEALING
CARBON
ELECTRON DENSITY
HOLES
HYDROGEN
MOBILITY
TEMPERATURE DEPENDENCE
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELEMENTS
GALLIUM COMPOUNDS
HEAT TREATMENTS
LASERS
MATERIALS
NONMETALS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
426002* - Engineering- Lasers & Masers- (1990-)