Moving species during ion mixing in Ge sub x Si sub 1 minus x /metal systems

Journal Article · Thu Feb 15 04:00:00 EST 1990 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.345608· OSTI ID:6975763

Xia, W; Hewett, C A; Fernandes, M; Lau, S S ^[1]; Poker, D B ^[2]

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1. Department of Electrical Computer Engineering, University of California, San Diego, La Jolla, California 92093-0407 (US)
2. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (USA)

The origin of the motion of semiconductors during ion mixing was investigated by studying both the temperature and the atomic mass dependence of moving species in the Ge{sub {ital x}}Si{sub 1{minus}{ital x}}/Ni and the Ge{sub {ital x}}Si{sub 1{minus}{ital x}}/Pd systems. Ion mixing was performed with 280-keV Ar ions at temperatures between 30 K and room temperature. The atomic mass of the Ge{sub {ital x}}Si{sub 1{minus}{ital x}} alloy was adjusted by changing the concentration of Ge in the alloy. In thermally induced reactions, no preferential motion of Si or Ge was observed. During ion mixing, the atomic flux of Si was observed to be enhanced compared to that of Ge. The atomic flux of the sum of Si and Ge to metal decreases with increasing substrate temperature during mixing and with increasing Ge concentration in the Ge{sub {ital x}}Si{sub 1{minus}{ital x}} alloy. From the strong atomic mass dependence of the moving species during ion mixing it is concluded that the origin of the motion of semiconductors under ion mixing conditions is due to the effects of secondary recoils.

• DOE Contract Number: FG03-84ER45156
• OSTI ID: 6975763
• Journal Information: Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 67:4; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ARGON IONS
CHARGED PARTICLES
COLLISIONS
DIFFUSION
ELEMENTS
ENERGY RANGE
GERMANIUM COMPOUNDS
GERMANIUM SILICIDES
ION COLLISIONS
IONS
KEV RANGE
KEV RANGE 100-1000
LOW TEMPERATURE
MEDIUM TEMPERATURE
METALS
MIXING
MOTION
NICKEL
PALLADIUM
PLATINUM METALS
QUANTITY RATIO
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
TRANSITION ELEMENTS
VERY LOW TEMPERATURE