Pulsed ion beam irradiation of Ni--Cr films on silicon

Journal Article · Sun Mar 01 04:00:00 EST 1987 · J. Vac. Sci. Technol., A; (United States)

DOI:https://doi.org/10.1116/1.574096· OSTI ID:6974108

Fastow, R; Brener, R; Eizenberg, M; Brat, T; Mayer, J W

Composite thin films, having compositions Ni/sub 25/Cr/sub 75/ and Ni/sub 75/Cr/sub 25/, deposited on single crystal silicon substrates were irradiated with a pulsed ion beam. These systems were compared to the binary Ni/Si and Cr/Si systems, and were characterized using Rutherford backscattering spectroscopy, Auger electron spectroscopy, x-ray diffraction, and transmission electron microscopy. Interfacial melting was observed in all samples. For the Cr/Si and alloy/Si samples, melting occurred at noneutectic interfacial compositions. The phase CrSi/sub 2/, in a layered structure of nickel silicides (Ni/sub 2/Si/NiSi/NiSi/sub 2/), was present in the reacted layers. Auger electron spectroscopy showed that an enrichment of Ni (in the form of NiSi/sub 2/) occurred at the silicon interface for both alloy compositions.

• Research Organization: Department of Materials Engineering, Technion, Israel Institute of Technology, Haifa 32000, Israel
• OSTI ID: 6974108
• Journal Information: J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 5:2; ISSN JVTAD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360106* -- Metals & Alloys-- Radiation Effects
ALLOYS
AUGER ELECTRON SPECTROSCOPY
BACKSCATTERING
BEAMS
CHROMIUM ALLOYS
COHERENT SCATTERING
COLLISIONS
DIFFRACTION
ELECTRON SPECTROSCOPY
ELEMENTS
INTERFACES
ION BEAMS
ION COLLISIONS
MELTING
NICKEL ALLOYS
NICKEL COMPOUNDS
NICKEL SILICIDES
PHASE TRANSFORMATIONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SCATTERING
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
SPECTROSCOPY
SUBSTRATES
TRANSITION ELEMENT COMPOUNDS
X-RAY DIFFRACTION